An integrated RF MESFET bias controller for point-to-point communications and microwave base stations is available from Maxim in a 48-pin, 7x7x0.8mm thin QFN package. Significantly the controller ...
Offering performance advantages over silicon or GaAs devices, the CRF-35010 silicon carbide RF power MESFET has a gate threshold voltage of –10 Vdc, a gate quiescent voltage of –9 Vdc, and a ...
Oki Electric Industry today announced it has developed a power Gallium Arsenide (GaAs) Metal Semiconductor Field Effect Transistor (MESFET) for 10-watt wireless communication, which achieves a high ...
The CRF-24010, a Class A/B 10-W silicon-carbide (SiC) MESFET, promises a minimum gain of 13 dB at 2 GHz, which is greater than 3 dB higher than previous SiC MESFETs. The device has a third-order ...
Wayne, N.J. — Agilent Technologies is looking to ease the design of high-frequency RF circuits this week (July 7) by releasing a design kit for its Advanced Design System (ADS) EDA tool that lets ...
Offering excellent medium power performance, the NE722S01 GaAs MESFET is said to be ideal for use as an oscillator in digital LNBs, as well as second and third stage amplifiers in receiver designs ...
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