New series leverages advanced Smart STripFET F8 power technology for best static performance and smaller die size ...

Wolfspeed, Inc., a global leader in silicon carbide (SiC) technology, today announced the industry's first commercially available 10 kV SiC power MOSFET. This milestone marks a defining moment in the ...

At APEC 2026, iDEAL Semiconductor drew attention with a silicon-based alternative to GaN and SiC, showcasing an expansion of ...

Since mass-production of the SiC MOSFET commenced in 2010, portfolios have expanded, often through the introduction of ...

Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new Automotive Grade photovoltaic MOSFET driver that is the first ...

IXYS announced the expansion of its high voltage power MOSFET product line, the 2000 V n-channel power MOSFET featuring 1 A current rating specifically designed for high voltage, high speed power ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, ...

Power semiconductor suppliers continue to advance the state-of-the-art in power MOSFETs by enhancing their process technology and packaging to suit the needs of popular power-supply applications.

The drive for more power in tighter dimensions is being addressed by advancements in both silicon and packaging technologies. A new power MOSFET combines a new generation of silicon technology with a ...

Ikoma, Japan – Scientists from Nara Institute of Science and Technology (NAIST) used the mathematical method called automatic differentiation to find the optimal fit of experimental data up to four ...

Toshiba Electronics Europe has expanded its DTMOSVI 600V portfolio with a new line of N‑channel power MOSFETs.